Volume 10
issue number 1 number 2 number 3 number 4
first page 1, 11, 17, 23, 35, 39, 43, 47, 53, 59, 63, 69, 75, 79, 83 89, 97, 105, 111, 137, 145, 151 159, 175, 185, 193, 199, 209, 217 225, 231, 237, 243, 251, 261, 271, 287, 291

CONTENTS - return

Vol. 10, No 1 Page up
Thermochromic liquid crystals applied for heat transfer research
J.A. Stasiek and T.A. Kowalewski
Investigations of the diffraction efficiency in dye-doped LC cells under low frequency AC voltage
T. Grudniewski, J. Parka, R. Dabrowski, A. Januszko, and A. Miniewicz
Antiferroelectric and V-shape liquid crystal on silicon microdisplays
J.M. Otón, R. Dabrowski, X. Quintana, V. Urruchi, and J.L. Gayo
Numerical modelling of LCD electro-optical performance
H. Wöhler and M.E. Becker
Significance of reflection reduction in a TN display for colour visualisation
M. Olifierczuk and J. Zielinski
Electrooptical properties of metal organic ionic liquid crystals
G. Klimusheva, A. Kovalchuk, N. Volynets, and A. Vakhnin
Soliton like solutions and subsurface behaviour of the nematic layer
A. Walczak
Unusual behaviour of binary mixtures of ferroelectric and antiferroelectric liquid crystals with three chiral centres
M. Glogarová, V. Novotná, M. Kašpar, and V. Hamplová
Influence of light on self-diffraction process in liquid crystal cells with photoconducting polymeric layers
J. Mysliwiec, A. Miniewicz, and S. Bartkiewicz
Spatial solitons interaction in liquid crystalline waveguides
M.A. Karpierz and Q.V. Nguyen
Dynamic behaviour of nematic polymers in a magnetic field
A.P. Filippov
Tuned liquid crystalline interferometer analysis by means of generalised Berreman matrix
A. Walczak, E. Nowinowski-Kruszelnicki, L. Jaroszewicz, and P. Marciniak
Liquid crystal display unit for reconfigurable instrument for automotive applications
P.M. Knoll and B.B. Kosmowski
Liquid crystals as active elements of sensors based on planar waveguide
Z. Mykytyuk, V. Ivanytskyy, V. Cherpak, D. Bolormaa, and A. Fechan
Photorefractivity of dye-doped NLC layers and possibility of their application
J. Parka
last page 87
Vol. 10, No 2 Page up
Novel Fourier approach to digital holography
S. Pasko and R. Jozwicki
Optimisation of a pulsed IR source for NDIR gas analysers
J. Puton, K. Jasek, B. Siodlowski, A. Knap, and K. Wisniewski
Four-level signalling in fiber optic transmission of two different bit rates data streams
P. Krehlik
Infrared devices and techniques
A. Rogalski and K. Chrzanowski
Raman investigation of sol-gel-derived hybrid polymers for optoelectronics
M. Gnyba, M. Keränen, M. Kozanecki, R. Bogdanowicz, B.B. Kosmowski, and P. Wroczynski
Sources of ultraviolet light and systems for its shaping for photoelectrical investigation of semiconductor structures
L. Borowicz, A. Kudla, P. Machalica, and M. Niemiec
Spectral analysis of mechanical and respiratory influences on width of subarachnoid space assessed with non-invasive method of near-infrared transillumination/back scattering sounding
A.F. Frydrychowski, M. Rojewski, and W. Guminski
last page 157
Vol. 10, No 3 Page up
HgCdTe infrared detectors
P. Norton
Monitorning of subarachnoid space and cerebrovascular pulsation with near-infrared transillumination/back scattering – new aspects of the method
A.F. Frydrychowski, M. Rojewski, and W. Guminski
Optical fibre interferometric system for Doppler effect measurement
L.R. Jaroszewicz and Z. Krajewski
Investigation of electroluminophores for their practical application in optical fibre sensor
T. Pustelny and B. Pustelny
Measurement of full-polarisation parameters using in-line fibre-optic polarimetric device
L.R. Jaroszewicz and P. Marc
Maximisation of signal-to-noise ratio in infrared radiation receivers
Z. Bielecki
Plasmon polaritons in metal nanostructures: the optoelectronic route to nanotechnology
M. Salerno, J.R. Krenn, B. Lamprecht, G. Schider, H. Ditlbacher, N. Felidj, A. Leitner,
and F.R. Aussenegg
last page
Vol. 10, No 4 Page up
Heteroepitaxial technology for high-efficiency UV light-emitting diode
S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki
Recent advances in gate dielectrics and polarised light emission from GaN
S.J. Pearton, C.R. Abernathy, B.P. Gila, A.H. Onstine, M.E. Overberg, G.T. Thaler, Jihyun Kim, B. Luo, R. Mehandru, F. Ren, and Y.D. Park
Advances in MOCVD technology for research, development and mass production of compound
semiconductor devices
K. Christiansen, M. Luenenbuerger, B. Schineller, M. Heuken, and H. Juergensen
Codoping of wide gap epitaxial III-Nitride semiconductors
R.Y. Korotkov, J.M. Gregie, and B.W. Wessels
UV detectors and focal plane array imagers based on AlGaN p-i-n photodiodes
J.P. Long, S. Varadaraajan, J. Matthews, and J.F. Schetzina
Reduction in dislocation density and strain in GaN thin films grown via maskless pendo-epitaxy
A.M. Roskowski, E.A. Preble, S. Einfeldt, P.M. Miraglia, J. Schuck, R. Grober, and R.F. Davis
AlGaN and InAlGaN alloys – epitaxial growth, optical and electrical properties, and applications
H.X. Jiang and J.Y. Lin
280 nm UV LEDs grown on HVPE GaN substrates
A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, P. Kung, M. Razeghi, and R.J. Molnar
Properties of metal-semiconductor-metal and Schottky barrier GaN detectors
L. Dobrzanski, A. Jagoda, K. Gora, and K. Przyborowska
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