| issue | number 1 | number 2 | number 3 | number 4 |
| first page | 1, 11, 17, 23, 35, 39, 43, 47, 53, 59, 63, 69, 75, 79, 83 | 89, 97, 105, 111, 137, 145, 151 | 159, 175, 185, 193, 199, 209, 217 | 225, 231, 237, 243, 251, 261, 271, 287, 291 |
| Vol. 10, No 1 | Page up |
| Thermochromic
liquid crystals applied for heat transfer research
J.A. Stasiek and T.A. Kowalewski |
1 |
| Investigations
of the diffraction efficiency in dye-doped LC cells under low frequency
AC voltage
T. Grudniewski, J. Parka, R. Dabrowski, A. Januszko, and A. Miniewicz |
11 |
| Antiferroelectric
and V-shape liquid crystal on silicon microdisplays
J.M. Otón, R. Dabrowski, X. Quintana, V. Urruchi, and J.L. Gayo |
17 |
| Numerical
modelling of LCD electro-optical performance
H. Wöhler and M.E. Becker |
23 |
| Significance
of reflection reduction in a TN display for colour visualisation
M. Olifierczuk and J. Zielinski |
35 |
| Electrooptical
properties of metal organic ionic liquid crystals
G. Klimusheva, A. Kovalchuk, N. Volynets, and A. Vakhnin |
39 |
| Soliton like
solutions and subsurface behaviour of the nematic layer
A. Walczak |
43 |
| Unusual behaviour
of binary mixtures of ferroelectric and antiferroelectric liquid crystals
with three chiral centres
M. Glogarová, V. Novotná, M. Kašpar, and V. Hamplová |
47 |
| Influence
of light on self-diffraction process in liquid crystal cells with photoconducting
polymeric layers
J. Mysliwiec, A. Miniewicz, and S. Bartkiewicz |
53 |
| Spatial solitons
interaction in liquid crystalline waveguides
M.A. Karpierz and Q.V. Nguyen |
59 |
| Dynamic behaviour of nematic polymers
in a magnetic field
A.P. Filippov |
63 |
| Tuned liquid crystalline interferometer
analysis by means of generalised Berreman matrix
A. Walczak, E. Nowinowski-Kruszelnicki, L. Jaroszewicz, and P. Marciniak |
69 |
| Liquid crystal display unit for reconfigurable
instrument for automotive applications
P.M. Knoll and B.B. Kosmowski |
75 |
| Liquid crystals as active elements
of sensors based on planar waveguide
Z. Mykytyuk, V. Ivanytskyy, V. Cherpak, D. Bolormaa, and A. Fechan |
79 |
| Photorefractivity of dye-doped NLC
layers and possibility of their application
J. Parka |
83 |
| last page | 87 |
| Vol. 10, No 2 | Page up |
| Novel
Fourier approach to digital holography
S. Pasko and R. Jozwicki |
89 |
| Optimisation of a pulsed IR
source for NDIR gas analysers
J. Puton, K. Jasek, B. Siodlowski, A. Knap, and K. Wisniewski |
97 |
| Four-level signalling in fiber
optic transmission of two different bit rates data streams
P. Krehlik |
105 |
| Infrared devices and techniques
A. Rogalski and K. Chrzanowski |
111 |
| Raman investigation of sol-gel-derived
hybrid polymers for optoelectronics
M. Gnyba, M. Keränen, M. Kozanecki, R. Bogdanowicz, B.B. Kosmowski, and P. Wroczynski |
137 |
| Sources of ultraviolet light
and systems for its shaping for photoelectrical investigation of semiconductor
structures
L. Borowicz, A. Kudla, P. Machalica, and M. Niemiec |
145 |
| Spectral analysis of mechanical
and respiratory influences on width of subarachnoid space assessed with
non-invasive method of near-infrared transillumination/back scattering
sounding
A.F. Frydrychowski, M. Rojewski, and W. Guminski |
151 |
| last page | 157 |
| Vol. 10, No 3 | Page up |
| HgCdTe infrared
detectors
P. Norton |
159 |
| Monitorning of subarachnoid space
and cerebrovascular pulsation with near-infrared transillumination/back
scattering – new aspects of the method
A.F. Frydrychowski, M. Rojewski, and W. Guminski |
175 |
| Optical fibre interferometric system
for Doppler effect measurement
L.R. Jaroszewicz and Z. Krajewski |
185 |
| Investigation of electroluminophores
for their practical application in optical fibre sensor
technology T. Pustelny and B. Pustelny |
193 |
| Measurement of full-polarisation
parameters using in-line fibre-optic polarimetric device
L.R. Jaroszewicz and P. Marc |
199 |
| Maximisation of signal-to-noise
ratio in infrared radiation receivers
Z. Bielecki |
209 |
| Plasmon polaritons in metal nanostructures:
the optoelectronic route to nanotechnology
M. Salerno, J.R. Krenn, B. Lamprecht, G. Schider, H. Ditlbacher, N. Felidj, A. Leitner, and F.R. Aussenegg |
217 |
| last page |
| Vol. 10, No 4 | Page up |
| Heteroepitaxial
technology for high-efficiency UV light-emitting diode
S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki |
225 |
| Recent advances in gate dielectrics
and polarised light emission from GaN
S.J. Pearton, C.R. Abernathy, B.P. Gila, A.H. Onstine, M.E. Overberg, G.T. Thaler, Jihyun Kim, B. Luo, R. Mehandru, F. Ren, and Y.D. Park |
231 |
| Advances in MOCVD technology for
research, development and mass production of compound
semiconductor devices K. Christiansen, M. Luenenbuerger, B. Schineller, M. Heuken, and H. Juergensen |
237 |
| Codoping of wide gap epitaxial III-Nitride
semiconductors
R.Y. Korotkov, J.M. Gregie, and B.W. Wessels |
243 |
| UV detectors and focal plane array
imagers based on AlGaN p-i-n photodiodes
J.P. Long, S. Varadaraajan, J. Matthews, and J.F. Schetzina |
251 |
| Reduction in dislocation density
and strain in GaN thin films grown via maskless pendo-epitaxy
A.M. Roskowski, E.A. Preble, S. Einfeldt, P.M. Miraglia, J. Schuck, R. Grober, and R.F. Davis |
261 |
| AlGaN and InAlGaN alloys – epitaxial
growth, optical and electrical properties, and applications
H.X. Jiang and J.Y. Lin |
271 |
| 280 nm UV LEDs grown on HVPE GaN
substrates
A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, P. Kung, M. Razeghi, and R.J. Molnar |
287 |
| Properties of metal-semiconductor-metal
and Schottky barrier GaN detectors
L. Dobrzanski, A. Jagoda, K. Gora, and K. Przyborowska |
291 |
| last page |