| Characterisation of materials | Page up |
| Laser modification of the electrical properties of vanadium oxide thin films | 131 |
| Optical absorption and luminescence of LiTaO3:Cr and LiTaO3:Cr, Nd crystals | 145 |
| Optical techniques used for in-situ studies of MBE growth processes | 181 |
| Photoreflectance study of coupling effects in double quantum wells | 117 |
| Study of Zn1-xMgxSe and Zn1-xBexSe semiconducting crystals by Raman scattering | 103 |
| Reciprocal lattice mapping of InGaAs layers grown on InP(001) and GaAs(001) substrates | 107 |
| Crystal growth | Page up |
| Growth and optical properties of Nd:YVO4 laser crystals | 149 |
| Fibre optics | Page up |
| Analysis of working conditions of multimode fibre amplifiers | 197 |
| Automatic fibre-optic sensor for oil detection | 203 |
| Multilevel signalling in multimode fibre links | 209 |
| Focal plane arrays | Page up |
| Uncooled IR focal plane arrays | 253 |
| Low-noise infrared and visible focal plane arrays | 259 |
| Sharp infrared eyes: the journey of QWIPs from concept to large inexpensive arrays in hand-held infrared cameras | 271 |
| Device physics and focal plane array applications of QWIP and MCT | 283 |
| Low cost 320?240 uncooled IRFPA using conventional silicon IC process | 297 |
| 512?512 element GeSi/Si heterojunction infrared focal plane array | 305 |
| A new type of dielectric bolometer mode of infrared detector using ferroelectric thin film capacitors for uncooled focal plane array | 313 |
| Design and implementation of infrared readout circuit using a new input circuit of current mirroring direct injection (CMDI) | 321 |
| MCT sensor readout devices with charge current injection and preliminary signal treatment. Testing procedure | 327 |
| Growth of epitaxial layers | Page up |
| Metalorganic vapour phase epitaxy of GaN and lateral overgrowth | 63 |
| Surface strain during homoepitaxy: growth and ion ablation of CdTe | 75 |
| Infrared detectors | Page up |
| AlxGayIn1–x–yAs/InP-based quantum well infrared photodetectors | 1 |
| A new type of dielectric bolometer mode of infrared detector using ferroelectric thin film capacitors for uncooled focal plane array | 313 |
| Characteristics of infrared photodiode using SiO2 insulator on InSb wafer with p–i–n structure | 369 |
| Device physics and focal plane array applications of QWIP and MCT | 283 |
| GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors | 153 |
| Novel electron mobility model for n–HgCdTe | 339 |
| Novel InTlSb alloy for uncooled long-wavelength infrared photodetectors | 19 |
| Numerical simulation for HgCdTe related detectors | 347 |
| Sharp infrared eyes: the journey of QWIPs from concept to large inexpensive arrays in hand-held infrared cameras | 271 |
| Studies of relationship between deep levels and RA product in mesa type HgCdTe devices | 361 |
| Surface passivation of Hg0.8Cd0.2Te grown by MBE | 357 |
| Uncooled IR focal plane arrays | 253 |
| Image processing | Page up |
| Simple video image segmentation system enabling real-time target tracking | 215 |
| Non-linear optics | Page up |
| On the nature of long-lived photoexcited states in polydiacetylenes: the photoinduced absorption spectra of PDA-4BCMU | 121 |
| Optical properties of semiconductors | Page up |
| Optical studies of MOVPE grown GaN layers | 93 |
| Optical properties of Zn1–xMgxSe epilayers studied by reflection spectroscopy | 113 |
| Photodiodes | Page up |
| Gate-controlled narrow band gap photodiodes passivated with RF sputtered dielectrics | 97 |
| Numerical simulation for HgCdTe related detectors | 347 |
| Photoluminescence | Page up |
| Photoluminescence and structural properties of selected wide-gap II-VI solid solutions | 87 |
| Role of surface substances in excitation of porous silicon photoluminescence | 135 |
| Quantum well systems | Page up |
| Intersubband transitions in n-type quantum well systems | 81 |
| Photoreflectance study of coupling effects in double quantum wells | 117 |
| Semiconductor lasers | Page up |
| Degradation process in II–VI-compounds-based electron-beam-pumped lasers and creation of material with uniquely high optical strength | 139 |
| Recent advance in semiconductors mid-infrared lasers emitting at 3–12 um | 29 |