Volume 7
issue number 1 number 2 number 3 number 4
first page 1, 19, 29 63, 75, 81, 87, 93,
97, 103, 107, 113,
117, 121, 131, 135, 139, 145, 149
153, 181, 197, 203, 209, 215 253, 259, 271, 283, 297, 305, 313, 321, 327, 339, 347, 357, 361, 369

CONTENT - return

Vol. 7, No 1 Page up 
Special issue. Part II: Optoelectronics in Center for Quantum Devices Northwestern University  
AlxGayIn1-x-yAs/InP-based quantum well infrared photodetectors
C. Jelen and M. Razeghi
Novel InTlSb alloy for uncooled long-wavelength infrared photodetectors
J.J. Lee, J.D. Kim and M. Razeghi
Recent advance in semiconductors mid-infrared lasers emitting at 3-12 mm
M. Razeghi
Vol. 7, No 2  Page up 
Metalorganic vapour phase epitaxy of GaN and lateral overgrowth 
B. Beaumont and P. Gibart
Surface strain during homoepitaxy: growth and ion ablation of CdTe
S. Tatarenko, V.H. Etgens, J.M. Hartmann, D. Martrou, A. Arnoult, J, Cibert, N. Magnea, M. Sauvage-Simkin, J. Alvarez, and S. Ferrer
Intersubband transitions in n-type quantum well systems
M. Zaluzny
Photoluminescence and structural properties of selected wide-gap II-VI solid solutions
F. Firszt, S. Legowski, H. Meczynska, B. Sekulska, J. Szatkowski, W. Paszkiewicz, and M. Marczak
Optical studies of MOVPE grown GaN layers
M. Ciorga, K. Jezierski, L. Bryja, J. Misiewicz, R. Paszkiewicz, R. Korbutowicz, M. Panak, B. Paszkiewicz, M. Tlaczala, and I. Trabjerg
Gate-controlled narrow band gap photodiodes passivated with RF sputtered dielectrics
J. Rutkowski, J. Wenus, W. Gawron, and K. Adamiec
Study of Zn1–xMgxSe and Zn1–xBexSe semiconducting crystalls by Raman scattering
M. Szybowicz, M. Kozielski, F. Firszt, S. Legowski, H. Meczynska, J. Szatkowski, and W. Paszkowicz
Reciprocal lattice mapping of InGaAs layers grown on InP(001) and GaAs(001) substra
J. Bak-Misiuk, J. Kaniewski, J. Domagala, K. Reginski, J. Adamczewska, and J. Trela
Optical properties of Zn1-xMgxSe epilayers studied by reflection spectroscopy
G. Glowacki and W. Bala
Photoreflectance study of coupling effects in double quantum wells
G. Sek, K. Ryczko, M. Kubisa, J. Misiewicz, J. Koeth, and A. Forchel
On the nature of long-lived photoexcited states in polydiacetylenes: the photoinduced absorption spectra of PDA-4BCMU
D. Comoretto, I. Moggio, A. Alloisio, C. Cuniberti, G.F. Musso, M. Ottonelli, G. Dellepiane, F. Kajzar, and A. Lorin
Laser modification of the electrical properties of vanadium oxide thin films
G.B. Stefanovich, A.L. Pergament, F.A. Chudnovskii, and D.O. Kikalov
Role of surface substances in excitation of porous silicon photoluminescence
L.Y. Khomenkova, N.P. Baran, B.R. Dzhumaev, N.E. Korsunskaya, T.V. Torchinskaya, Y. Goldstein, E. Savir, and A. Many
Degradation process in II-VI-compounds-based electron-beam-pumped lasers and creation of material with uniquely high optical strength
L.V. Borkovskaya, B.R. Dzhumaev, N.E. Korsunskaya, V.P. Papusha, G.S. Pekar, and A.F. Singaevsky
Optical absorption and luminescence of LiTaO3:Cr and LiTaO3:Cr, Nd crystals
S. Golab, I. Sokolska, G. Dominiak-Dzik, M.N. Palatnikov, N.V. Sidorov, I. Biryukova, V.T. Kalinnikov, and W. Ryba-Romanowski
Growth and optical properties of Nd:YVO4 laser crystals
S.M. Kaczmarek, T. Lukasiewicz, W. Giersz, R. Jablonski, J.K. Jabczynski, M. Swirkowicz, Z. Galazka, W. Drozdowski, and M. Kwasny
Vol. 7, No 3 Page up 
GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared detectors
A.G.U. Perera and W.Z. Shen
Optical techniques used for in-situ studies of MBE growth processes
A. Herman
Analysis of working conditions of multimode fibre amplifiers
M. Borecki and J. Kruszewski
Automatic fibre-optic sensor for oil detection
M. Borecki, J. Kruszewski, and M. Beb³owska
Multilevel signalling in multimode fibre links
P. Krehlik
Simple video image sementation system enabling real-time target tracking
J. Siuzdak
Vol. 7, No 4  Page up 
Special issue: Infrared Focal Plane Arrays  
Uncooled IR focal plane arrays
P.W. Kruse
Low-noise infrared and visible focal plane arrays
L. Kozlowski, K. Vural, J. Luo, A. Tomasini, T. Liu, and W.K. Kleinhans
Sharp infrared eyes: the journey of QWIPs from concept to large inexpensive sensitive arrays in hand-held infrared cameras
S. Gunapala, S. Bandara, J. Liu, S. Rafol, and D. Ting
Device physics and focal plane array applications of QWIP and MCT
M.Z. Tidrow, W.A. Beck, W.W. Clark, H.K. Pollehn, J.W. Little, N.K. Dhar, P.R. Leavitt, S.W. Kennerly, D.W. Beekman, A.C. Goldberg, and W.R. Dyer
Low cost 320 /240 uncooled IRFPA using conventional silicon IC process
Ishikawa, M. Ueno, K. Endo, Y. Nakaki, H. Hata, T. Sone, and M. Kimata
512/512 element GeSi/Si heterojunction infrared focal plane array
H. Wada, M. Nagashima, K. Hayashi, J. Nakanishi, M. Kimata, M. Kumada, and S. Ito
A new type of dielectric bolometer mode of infrared detector using ferroelectric thin film capacitors for uncooled focal plane array
M. Noda, K. Hashimoto, R. Kubo, H. Tanaka, T. Mukaigawa, H. Xu, and M. Okuyama
Design and implementation of infrared readout circuit using a new input circuit of current mirroring direct injection (CMDI)
N. Yoon, B. Kim, H.C. Lee, and C.K. Kim
MCT sensor readout devices with charge current injection and preliminary signal treatment. Testing procedure
F.F. Sizov, Y.P. Derkach, V.P. Reva, and Y.G. Kononenko
Novel electron mobility model for n–HgCdTe
S.D. Yoo, B.G. Ko, G.S. Lee, J.G. Park, and K.D. Kwack
Numerical simulation for HgCdTe related detectors
S.D. Yoo, N.H. Jo, B.G. Ko, J. Chang, J.G. Park, and K.D. Kwack
Surface passivation of Hg0.8Cd0.2Te grown by MBE
H.C. Jeon, J.H. Leem, Y.S. Ryu, C.K. Kang, N.H. Kim, T.W. Kang, H.J. Kim, D.Y. Kim, and M.S. Han
Studies of relationship between deep levels and R0A product in mesa type HgCdTe devices
J. Yoshino, J. Morimoto, H. Wada, A. Ajisawa, M. Kawamo, and N. Oda
Characteristics of infrared photodiode using SiO2 insulator on InSb wafer with p–i–n structure
J.Y. Cho, J.S. Kim, S.H. Son, J.H. Lee, and S.Y. Choi

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