| issue | number 1 | number 2 | number 3 | number 4 |
| first page | 1, 19, 29 | 63, 75, 81,
87,
93,
97, 103, 107, 113, 117, 121, 131, 135, 139, 145, 149 |
153, 181, 197, 203, 209, 215 | 253, 259, 271, 283, 297, 305, 313, 321, 327, 339, 347, 357, 361, 369 |
| Vol. 7, No 1 | Page up |
| Special issue. Part II: Optoelectronics in Center for Quantum Devices Northwestern University | |
| AlxGayIn1-x-yAs/InP-based
quantum well infrared photodetectors
C. Jelen and M. Razeghi |
1 |
| Novel InTlSb
alloy for uncooled long-wavelength infrared photodetectors
J.J. Lee, J.D. Kim and M. Razeghi |
19 |
| Recent advance
in semiconductors mid-infrared lasers emitting at 3-12 mm
M. Razeghi |
29 |
| Vol. 7, No 2 | Page up |
| Metalorganic
vapour phase epitaxy of GaN and lateral overgrowth
B. Beaumont and P. Gibart |
63 |
| Surface strain
during homoepitaxy: growth and ion ablation of CdTe
S. Tatarenko, V.H. Etgens, J.M. Hartmann, D. Martrou, A. Arnoult, J, Cibert, N. Magnea, M. Sauvage-Simkin, J. Alvarez, and S. Ferrer |
75 |
| Intersubband
transitions in n-type quantum well systems
M. Zaluzny |
81 |
| Photoluminescence
and structural properties of selected wide-gap II-VI solid solutions
F. Firszt, S. Legowski, H. Meczynska, B. Sekulska, J. Szatkowski, W. Paszkiewicz, and M. Marczak |
87 |
| Optical studies
of MOVPE grown GaN layers
M. Ciorga, K. Jezierski, L. Bryja, J. Misiewicz, R. Paszkiewicz, R. Korbutowicz, M. Panak, B. Paszkiewicz, M. Tlaczala, and I. Trabjerg |
93 |
| Gate-controlled
narrow band gap photodiodes passivated with RF sputtered dielectrics
J. Rutkowski, J. Wenus, W. Gawron, and K. Adamiec |
97 |
| Study of
Zn1–xMgxSe and Zn1–xBexSe semiconducting
crystalls by Raman scattering
M. Szybowicz, M. Kozielski, F. Firszt, S. Legowski, H. Meczynska, J. Szatkowski, and W. Paszkowicz |
103 |
| Reciprocal
lattice mapping of InGaAs layers grown on InP(001) and GaAs(001) substra
J. Bak-Misiuk, J. Kaniewski, J. Domagala, K. Reginski, J. Adamczewska, and J. Trela |
107 |
| Optical
properties of Zn1-xMgxSe epilayers studied by reflection
spectroscopy
G. Glowacki and W. Bala |
113 |
| Photoreflectance
study of coupling effects in double quantum wells
G. Sek, K. Ryczko, M. Kubisa, J. Misiewicz, J. Koeth, and A. Forchel |
117 |
| On the nature
of long-lived photoexcited states in polydiacetylenes: the photoinduced
absorption spectra of PDA-4BCMU
D. Comoretto, I. Moggio, A. Alloisio, C. Cuniberti, G.F. Musso, M. Ottonelli, G. Dellepiane, F. Kajzar, and A. Lorin |
121 |
| Laser modification
of the electrical properties of vanadium oxide thin films
G.B. Stefanovich, A.L. Pergament, F.A. Chudnovskii, and D.O. Kikalov |
131 |
| Role of
surface substances in excitation of porous silicon photoluminescence
L.Y. Khomenkova, N.P. Baran, B.R. Dzhumaev, N.E. Korsunskaya, T.V. Torchinskaya, Y. Goldstein, E. Savir, and A. Many |
135 |
| Degradation
process in II-VI-compounds-based electron-beam-pumped lasers and creation
of material with uniquely high optical strength
L.V. Borkovskaya, B.R. Dzhumaev, N.E. Korsunskaya, V.P. Papusha, G.S. Pekar, and A.F. Singaevsky |
139 |
| Optical
absorption and luminescence of LiTaO3:Cr and LiTaO3:Cr,
Nd crystals
S. Golab, I. Sokolska, G. Dominiak-Dzik, M.N. Palatnikov, N.V. Sidorov, I. Biryukova, V.T. Kalinnikov, and W. Ryba-Romanowski |
145 |
| Growth and
optical properties of Nd:YVO4 laser crystals
S.M. Kaczmarek, T. Lukasiewicz, W. Giersz, R. Jablonski, J.K. Jabczynski, M. Swirkowicz, Z. Galazka, W. Drozdowski, and M. Kwasny |
149 |
| Vol. 7, No 3 | Page up |
| GaAs homojunction
interfacial workfunction internal photoemission (HIWIP) far-infrared detectors
A.G.U. Perera and W.Z. Shen |
153 |
| Optical
techniques used for in-situ studies of MBE growth processes
A. Herman |
181 |
| Analysis
of working conditions of multimode fibre amplifiers
M. Borecki and J. Kruszewski |
197 |
| Automatic
fibre-optic sensor for oil detection
M. Borecki, J. Kruszewski, and M. Beb³owska |
203 |
| Multilevel
signalling in multimode fibre links
P. Krehlik |
209 |
| Simple video
image sementation system enabling real-time target tracking
J. Siuzdak |
215 |
| Vol. 7, No 4 | Page up |
| Special issue: Infrared Focal Plane Arrays | |
| Uncooled
IR focal plane arrays
P.W. Kruse |
253 |
| Low-noise
infrared and visible focal plane arrays
L. Kozlowski, K. Vural, J. Luo, A. Tomasini, T. Liu, and W.K. Kleinhans |
259 |
| Sharp infrared
eyes: the journey of QWIPs from concept to large inexpensive sensitive
arrays in hand-held infrared cameras
S. Gunapala, S. Bandara, J. Liu, S. Rafol, and D. Ting |
271 |
| Device physics
and focal plane array applications of QWIP and MCT
M.Z. Tidrow, W.A. Beck, W.W. Clark, H.K. Pollehn, J.W. Little, N.K. Dhar, P.R. Leavitt, S.W. Kennerly, D.W. Beekman, A.C. Goldberg, and W.R. Dyer |
283 |
| Low cost
320 /240 uncooled IRFPA using conventional silicon IC process
Ishikawa, M. Ueno, K. Endo, Y. Nakaki, H. Hata, T. Sone, and M. Kimata |
297 |
| 512/512
element GeSi/Si heterojunction infrared focal plane array
H. Wada, M. Nagashima, K. Hayashi, J. Nakanishi, M. Kimata, M. Kumada, and S. Ito |
305 |
| A new type
of dielectric bolometer mode of infrared detector using ferroelectric thin
film capacitors for uncooled focal plane array
M. Noda, K. Hashimoto, R. Kubo, H. Tanaka, T. Mukaigawa, H. Xu, and M. Okuyama |
313 |
| Design and
implementation of infrared readout circuit using a new input circuit of
current mirroring direct injection (CMDI)
N. Yoon, B. Kim, H.C. Lee, and C.K. Kim |
321 |
| MCT sensor
readout devices with charge current injection and preliminary signal treatment.
Testing procedure
F.F. Sizov, Y.P. Derkach, V.P. Reva, and Y.G. Kononenko |
327 |
| Novel electron
mobility model for n–HgCdTe
S.D. Yoo, B.G. Ko, G.S. Lee, J.G. Park, and K.D. Kwack |
339 |
| Numerical
simulation for HgCdTe related detectors
S.D. Yoo, N.H. Jo, B.G. Ko, J. Chang, J.G. Park, and K.D. Kwack |
347 |
| Surface
passivation of Hg0.8Cd0.2Te grown by MBE
H.C. Jeon, J.H. Leem, Y.S. Ryu, C.K. Kang, N.H. Kim, T.W. Kang, H.J. Kim, D.Y. Kim, and M.S. Han |
357 |
| Studies
of relationship between deep levels and R0A product in mesa
type HgCdTe devices
J. Yoshino, J. Morimoto, H. Wada, A. Ajisawa, M. Kawamo, and N. Oda |
361 |
| Characteristics
of infrared photodiode using SiO2 insulator on InSb wafer with
p–i–n structure
J.Y. Cho, J.S. Kim, S.H. Son, J.H. Lee, and S.Y. Choi |
369 |